By O. G. Karpinskii, B. A. Evseev (auth.), Academician N. N. Sirota (eds.)
Read or Download Chemical Bonds in Solids: Volume 4: Semiconductor Crystals, Glasses, and Liquids PDF
Best chemical books
Chemical Mutagens: Environmental results on organic platforms brings jointly proper proof approximately artificial and of course taking place mutagenic chemical compounds. equipped into elements, this e-book starts with an easy dialogue at the glossy ideas of the gene on the molecular and biochemical degrees. the 1st half additionally appears to be like into the different sorts of mutations and the way they shape, in addition to the organic platforms used for his or her detection.
Mesoscale Modeling in Chemical Engineering, a quantity within the Advances in Chemical Engineering sequence presents the reader with own perspectives of gurus within the box. matters lined will not be restricted to the classical chemical engineering disciplines, with contributions connecting chemical engineering to comparable clinical fields, hence supplying new rules for extra concept.
- CMOS Hotplate Chemical Microsensors (Microtechnology and MEMS)
- A Thermochemical Heat Storage System for Households: Combined Investigations of Thermal Transfers Coupled to Chemical Reactions
- Gas Flow and Chemical Lasers
- Chemical Transformations of Polymers
Extra resources for Chemical Bonds in Solids: Volume 4: Semiconductor Crystals, Glasses, and Liquids
Sb20 3 is added most of the Sb ions are pentavalent. In this case, the defect concentration is sharply increased; this is due to the fact that the X=f(T) curve for this composition is higher than the other curves. In addition to this, since the pentavalent Sb ion is present (for composition 5), the radius of which is considerably less than that of Zn2+, Sb3+, and Sn'+, the diamagnetic component of the susceptibility is much lower; this is confirmed by the nature of the dependence of the magnetic susceptibility on the antimony concentration.
C. Suits and B. E. Argyle, J. Appl. , 36:1251 (1965). V. K. Miloslavskii, E. N. Naboikina, and T. S. Kiyan, Fiz. Tekh. , 1:629 (1967). P. D. Fochs, Proc. Phys. Soc" London, B69:70 (1956). G. Busch, P. Junod, and P. Wachter, Phys. , 12:11 (1964). G. Busch, P. Junod, M. Risi, and O. Vogt, Proc. Sixth Intern. Conf. on Physics of Semiconductors, Exeter, England, 1962, publ. by The Institute of Physics, London (1962), p. 727. 3 InAs IN RELATION TO THE STRUCTURE OF THE ENERGY BANDS* , N. N. Sirota and E.
2:650 (1966). Y. Fujino, D. Shinoda, S. Asanabe, and Y. Sasaki, Jap. J. Appl. , 3:431 (1964). V. A. Korshunov, F. A. Sidorenko, P. V. Gel'd, and K. N. Davydov, Fiz. Metal. , 12:277 (1961). E. N. Nikitin and V. K. Zaitsev, Izv. Akad. Nauk SSSR, Neorg. , 1:1526 (1965). CHARACTERISTIC FEA TURES OF THE PHYSICOCHEMICAL STRUCTURE OF CHROMIUM DISILICIDE* B. K. Voronov, L. D. Dudkin, and N. N. Trusova An electron-valence scheme of chromium disilicide is proposed on the basis of a comparison of a crystallochemical analysis of this compound with its electrical and magnetic properties.