Download Low Power and Reliable SRAM Memory Cell and Array Design by Koichiro Ishibashi (auth.), Koichiro Ishibashi, Kenichi PDF

By Koichiro Ishibashi (auth.), Koichiro Ishibashi, Kenichi Osada (eds.)

Success within the improvement of contemporary complex semiconductor machine applied sciences is because of the good fortune of SRAM reminiscence cells. This booklet addresses a variety of concerns for designing SRAM reminiscence cells for complex CMOS expertise. to check LSI layout, SRAM telephone layout is the easiest fabrics topic simply because concerns approximately variability, leakage and reliability need to be taken into consideration for the design.

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Extra resources for Low Power and Reliable SRAM Memory Cell and Array Design

Sample text

The activated DCs drive the dummy bitline, whose capacitance is identical to the regular bitline (bt, bb). The dummy bitline then becomes the voltage-adapted pulse. The voltage-adapted pulse is used for the sense-amplifier-enable signal (sa en), the pre-charge-reset signal (pc en), and the word line-reset signal. The most important point is that the delay due to the high-threshold-voltage memory cells (DCs) is also included in the control path that activates the sense amplifier. Detailed circuit diagrams of the dummy-column cell (DC) and edge-column cell (EC) are shown in Fig.

Its bit lines are shorter because of the low-aspect ratio; hence, parasitic capacitance of bit lines is reduced and read and write access is faster. Crosstalk between bit lines is drastically reduced because bit lines are shielded by VDD lines and VSS lines, and noises on the VDD 40 Fig. 18 SEM photograph of diffusion and poly-Si layers of 45 nm SRAM cell. 245 m2 K. Osada and M. Yamaoka a P2 N3 N1 P1 N2 N4 b lines and VSS lines are reduced because these lines run on orthogonal word lines and every memory cell’s read current flows on each VDD line and each VSS line.

The proposed techniques control power line voltage with minimum sacrifice of its operation stability. The power supply voltage of SRAM cells is proposed to be controlled to intermediate voltage between VDD and VSS , and the intermediate voltage enables both leakage reduction and data retention. The intermediate voltage has to be generated by simple circuit, because if a complex circuit is used, extra power consumption and an area penalty are necessary. This section proposes a simple voltage control circuit, which is composed of only power switch, resistance, and diode.

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