By Yuhua Cheng
Circuit simulation is key in built-in circuit layout, and the accuracy of circuit simulation will depend on the accuracy of the transistor version. BSIM3v3 (BSIM for Berkeley Short-channel IGFET version) has been chosen because the first MOSFET version for standardization via the Compact version Council, a consortium of best businesses in semiconductor and layout instruments. within the following couple of years, many fabless and built-in semiconductor businesses are anticipated to change from dozens of alternative MOSFET versions to BSIM3. this may require many gadget engineers and so much circuit designers to profit the fundamentals of BSIM3. MOSFET Modeling & BSIM3 User's advisor explains the particular actual results which are very important in modeling MOSFETs, and provides the derivations of compact version expressions in order that clients can comprehend the actual that means of the version equations and parameters. it's the first booklet dedicated to BSIM3. It treats the BSIM3 version in aspect as utilized in electronic, analog and RF circuit layout. It covers the entire set of types, i.e., I-V version, capacitance version, noise version, parasitics version, substrate present version, temperature impression version and non quasi-static version. MOSFET Modeling & BSIM3 User's advisor not just addresses the machine modeling matters but additionally presents a user's consultant to the gadget or circuit layout engineers who use the BSIM3 version in digital/analog circuit layout, RF modeling, statistical modeling, and expertise prediction. This ebook is written for circuit designers and machine engineers, as good as machine scientists all over the world. it's also compatible as a reference for graduate classes and classes in circuit layout or equipment modelling. moreover, it may be used as a textbook for undefined classes dedicated to BSIM3. MOSFET Modeling & BSIM3 User's advisor is finished and sensible. it really is balanced among the historical past details and complicated dialogue of BSIM3. it really is valuable to specialists and scholars alike.
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Extra resources for MOSFET Modeling and BSIM3 User's Guide
The effective gate voltage can be calculated as follows. Assume that the doping concentration in the poly gate near the interface is N GATE. 1) where Epoly is the electric field at the poly-gate/oxide interface. 2) where E ox is the electric field in the gate oxide. 3) where Vox is the voltage drop across the gate oxide and Vox = Eox Tox . Fig. 1 A MOSFET with the poly gate depletion region is shown. The device is in the strong inversion region. From Eqs. 5) By solving Eq. 6) Fig. 2 shows V gs_eƒƒ / Vgs versus the gate voltage.
15) Eqs. 15) are used frequently in the compact modeling of MOSFETs. 3 Inversion If the positive gate bias continues to increase and is much larger than VFB , the device will enter the inversion region. 3 Channel Charge Theory applied gate voltage. The inversion regime corresponding to a surface potential between φB and 2φ B is called weak inversion, and the region in which the surface potential is large than 2φ B is called strong inversion. 60]. In compact modeling, the condition of φ s =2 φ B has also been used as the somewhat arbitrary separating point between weak inversion and strong inversion.
51]. 51]. Compact modeling of RSCE will be discussed in Chapter 3. Fig. 5 A hump can be seen in the Vth -L characteristics of a device with RSCE. After Orlowski et al. 42]. 4 Normal narrow-width effects Device width has been found to have a significant effect on the device characteristics. Fig. 6 shows a cross-sectional view of a Localized-oxidation-ofsilicon (LOCOS) isolated MOSFET along the width direction. It can be seen that the polysilicon gate overlaps the thick oxide on both sides of the thin gate oxide or channel region.