Download MOSFET modeling & BSIM3 user’s guide by Yuhua Cheng PDF

By Yuhua Cheng

Circuit simulation is key in built-in circuit layout, and the accuracy of circuit simulation is dependent upon the accuracy of the transistor version. BSIM3v3 (BSIM for Berkeley Short-channel IGFET version) has been chosen because the first MOSFET version for standardization by way of the Compact version Council, a consortium of top businesses in semiconductor and layout instruments.
within the following couple of years, many fabless and built-in semiconductor businesses are anticipated to modify from dozens of alternative MOSFET types to BSIM3. this can require many machine engineers and so much circuit designers to benefit the fundamentals of BSIM3.
MOSFET Modeling & BSIM3 User's Guide explains the precise actual results which are very important in modeling MOSFETs, and provides the derivations of compact version expressions in order that clients can comprehend the actual which means of the version equations and parameters.
it's the first booklet dedicated to BSIM3. It treats the BSIM3 version in aspect as utilized in electronic, analog and RF circuit layout. It covers the entire set of versions, i.e., I-V version, capacitance version, noise version, parasitics version, substrate present version, temperature impression version and non quasi-static version.
MOSFET Modeling & BSIM3 User's Guide not just addresses the gadget modeling matters but in addition offers a user's advisor to the gadget or circuit layout engineers who use the BSIM3 version in digital/analog circuit layout, RF modeling, statistical modeling, and expertise prediction.
This booklet is written for circuit designers and equipment engineers, as good as gadget scientists world wide. it's also appropriate as a reference for graduate classes and classes in circuit layout or gadget modelling. additionally, it may be used as a textbook for undefined classes dedicated to BSIM3.
MOSFET Modeling & BSIM3 User's Guide is complete and useful. it truly is balanced among the history details and complicated dialogue of BSIM3. it's useful to specialists and scholars alike.

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2 shows Qs vs. surface potential in an n-channel MOSFET, from accumulation through depletion to the strong inversion regions. Next we will discuss the charge characteristics in each of the three regions. Fig. 2 Charge in semiconductor of an n-channel MOSFET at different gate bias conditions calculated with Eq. 6). 1 Accumulation If the applied gate bias Vg is less than the flat band voltage VFB (usually VFB is negative for an n-channel device), the negative voltage at the gate will create negative charge on the gate and induce positive charge at the silicon surface, which means excess holes are accumulated at the surface.

Flat band voltage V FB : The definition of the flat band voltage is simple for a uniformly doped substrate. It is the gate voltage at which the surface potential is zero, the surface electric field is zero, and the entire substrate is charge neutral. For a non-uniformly doped device, no gate voltage can cause the substrate to be charge neutral at all depths. VFB in a non-uniformly doped MOSFET may be taken as the gate voltage at which the sum of all the charge in the substrate is zero. At VFB , the surface potential may be nonzero, but the surface electric field is zero.

3. Depending on the oxide thickness 36 CHAPTER 2 Significant Physical Effects In Modern MOSFETs and doping concentration, the surface potential in strong inversion can be 200mV higher than 2φ B . Therefore, the 2φ B approximation used in modeling the charge and threshold voltage has underestimated the actual surface potential value. For devices with thin gate oxides, this fact will impact the accuracy of the models based on this approximation in predicting the actual device characteristics without any correction through the parameter extraction.

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